페이지 정보Name radiopulse Date17-04-13 11:21 View2,987
Leiden, Netherlands and Milpitas, CA. November 29, 2016 – IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical technology, and motor control applications, today announced an expansion of its low-voltage Trench MOSFET products, 60V TrenchT3™ HiPerFET™ Power MOSFETs. With on-resistance as low as 3.1 milliohms, these devices are designed for high power density, switched-mode power conversion applications.
These new MOSFETs can withstand a junction temperature up to 175 degrees C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high speed switching.
Well suited industrial applications include brushed motor drive, brushless DC (BLDC) motor drive, synchronous rectification, high current switching power supplies, primary side switches, DC-DC converters, power control for drones, electric forklifts, light electric vehicles (LEV), battery chargers, solar panel power switches, solid state relays and cordless home appliances and power tools.
These new 60V TrenchT3™ HiPerFET™ Power MOSFETs are available in the following international standard size packages: TO-220, TO-263, and TO-247. Some example part numbers are IXFA220N06T3, IXFH220N06T3, IXFP270N06T3 and IXFH270N06T3. The first two are rated at 220A and the last two 270A.
Additional product information can be obtained by visiting the IXYS website at http://www.ixys.com or by contacting the company directly.